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Transistors with built-in Resistor
UNR121x Series (UN121x Series)
Silicon NPN epitaxial planar type
Unit: mm
For digital circuits
(0.4)
6.90.1 (1.5) (1.5)
3.50.1
2.50.1 (1.0)
(1.0) 2.00.2 2.40.2
1.00.1
* * * * * * * * * * * * * * *
UNR1210 UNR1211 UNR1212 UNR1213 UNR1214 UNR1215 UNR1216 UNR1217 UNR1218 UNR1219 UNR121D UNR121E UNR121F UNR121K UNR121L
(UN1210) (UN1211) (UN1212) (UN1213) (UN1214) (UN1215) (UN1216) (UN1217) (UN1218) (UN1219) (UN121D) (UN121E) (UN121F) (UN121K) (UN121L)
(R1) 47 k 10 k 22 k 47 k 10 k 10 k 4.7 k 22 k 0.51 k 1 k 47 k 47 k 4.7 k 10 k 4.7 k
(R2) 10 k 22 k 47 k 47 k 5.1 k 10 k 10 k 22 k 10 k 4.7 k 4.7 k
3 (2.5)
2 (2.5)
1
1.250.05
Resistance by Part Number
(0.85) 0.550.1
0.450.05
1: Base 2: Collector 3: Emitter M-A1 Package
Internal Connection
R1 B R2 E C
Absolute Maximum Ratings Ta = 25C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg Rating 50 50 100 400 150 -55 to +150 Unit V V mA mW C C
Note) The part numbers in the parenthesis show conventional part number.
Publication date: October 2003 SJH00003BED
4.10.2
* Costs can be reduced through downsizing of the equipment and reduction of the number of parts * M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board
R 0.9 R 0.7
4.50.1
Features
1
UNR121x Series
Electrical Characteristics Ta = 25C 3C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base UNR1211 Symbol VCBO VCEO ICBO ICEO IEBO Conditions IC = 10 A, IE = 0 IC = 2 mA, IB = 0 VCB = 50 V, IE = 0 VCE = 50 V, IB = 0 VEB = 6 V, IC = 0 Min 50 50 0.1 0.5 0.5 0.2 0.1 0.01 1.0 1.5 2.0 hFE VCE = 10 V, IC = 5 mA 35 60 80 160 30 20 VCE(sat) VOH VOL IC = 10 mA, IB = 0.3 mA VCC = 5 V, VB = 0.5 V, RL = 1 k VCC = 5 V, VB = 2.5 V, RL = 1 k VCC = 5 V, VB = 3.5 V, RL = 1 k VCC = 5 V, VB = 10 V, RL = 1 k VCC = 5 V, VB = 6 V, RL = 1 k fT R1 VCB = 10 V, IE = -2 mA, f = 200 MHz -30% 80 10 22 47 4.7 0.51 1 R1/R2 0.8 0.17 0.08 1.0 0.21 0.1 4.7 2.14 0.47 2.13 1.2 0.25 0.12 +30% MHz k 4.9 0.2 0.25 V V V 460 Typ Max Unit V V A A mA
cutoff current UNR1212/1214/121D/121E (Collector open) UNR1213 UNR1210/1215/1216/1217 UNR121F/121K UNR1219 UNR1218/121L Forward current UNR1211 transfer ratio UNR1212/121E UNR1213/1214 UNR1210 */1215 */1216 */ 1217 * UNR1219/121D/121F UNR1218/121K/121L Collector-emitter saturation voltage Output voltage high-level Output voltage low-level UNR1213/121K UNR121D UNR121E Transition frequency Input resistance UNR1211/1214/1215/121K UNR1212/1217 UNR1210/1213/121D/121E UNR1216/121F/121L UNR1218 UNR1219 Resistance ratio UNR1211/1212/1213/121L UNR1214 UNR1218/1219 UNR121D UNR121E UNR121F UNR121K
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification (UNR1110/1115/1116/1117) Rank hFE Q 160 to 260 R 210 to 340 S 290 to 460
2
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UNR121x Series
Common characteristics chart PT Ta
500
Total power dissipation PT (mW)
400
300
200
100
0
0
40
80
120
160
Ambient temperature Ta (C)
Characteristics charts of UNR1210 IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
60 IB = 1.0 mA 0.9 mA 0.8 mA Ta = 25C
VCE(sat) IC
100
hFE IC
400 VCE = 10 V
IC / IB = 10
50
Forward current transfer ratio hFE
Collector current IC (mA)
10
300 Ta = 75C 25C 200 -25C 100
40 0.4 mA 0.5 mA 0.6 mA 0.7 mA 0.1 mA
30
0.3 mA
1 Ta = 75C 25C 0.1 -25C 0.01 0.1
20
10
0
0
1 10 100
0
2
4
6
8
10
12
1
10
100
1 000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
IO VIN
104 VO = 5 V Ta = 25C
100
VIN IO
VO = 0.2 V Ta = 25C
5
Output current IO (A)
4
3
102
Input voltage VIN (V)
103
10
1
2
10
0.1
1
0 0.1
1
10
100
1 0.4
0.6
0.8
1.0
1.2
1.4
0.01 0.1
1
10
100
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
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3
UNR121x Series
Characteristics charts of UNR1211 IC VCE
IB = 1.0 mA 0.9 mA 0.8 mA Ta = 25C
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
100 IC / IB = 10
hFE IC
400 VCE = 10 V
160
Collector current IC (mA)
120
0.7 mA 0.6 mA 0.5 mA 0.4 mA
10
Forward current transfer ratio hFE
300
Ta = 75C
80
0.3 mA
1 25C 0.1 -25C
200 25C 100 -25C
0.2 mA 40
Ta = 75C
0.1 mA 0 0 2 4 6 8 10 12
0.01 0.1
1
10
100
0
1
10
100
1 000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
IO VIN
104 VO = 5 V Ta = 25C
100
VIN IO
VO = 0.2 V Ta = 25C
5
Output current IO (A)
4
Input voltage VIN (V)
103
10
3
102
1
2
10
0.1
1
0 0.1
1
10
100
1 0.4
0.6
0.8
1.0
1.2
1.4
0.01 0.1
1
10
100
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR1212 IC VCE
Ta = 25C IB = 1.0 mA 0.9 mA 0.8 mA 120
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
100 IC / IB = 10
400
hFE IC
VCE = 10 V
160
Collector current IC (mA)
0.7 mA 0.6 mA 0.5 mA 0.4 mA
10
Forward current transfer ratio hFE
300
Ta = 75C
80 0.3 mA
1 Ta = 75C
200 25C -25C
25C 0.1 -25C
40
0.2 mA
100
0.1 mA 0 0 2 4 6 8 10 12
0.01 0.1
1
10
100
0
1
10
100
1 000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
4
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UNR121x Series
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
IO VIN
104 VO = 5 V Ta = 25C
100
VIN IO
VO = 0.2 V Ta = 25C
5
Output current IO (A)
4
3
102
Input voltage VIN (V)
0.6 0.8 1.0 1.2 1.4
103
10
1
2
10
0.1
1
0 0.1
1
10
100
1 0.4
0.01
0.1 1 10 100
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR1213 IC VCE
Ta = 25C IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA 80 0.3 mA
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
100 IC / IB = 10
hFE IC
400 VCE = 10 V
160
Forward current transfer ratio hFE
Collector current IC (mA)
120
10
300
Ta = 75C 25C -25C
1
200
40
0.2 mA
25C 0.1 -25C 0.01 0.1
Ta = 75C
100
0.1 mA 0
0
2
4
6
8
10
12
1
10
100
0
1
10
100
1 000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
IO VIN
104 VO = 5 V Ta = 25C
100
VIN IO
VO = 0.2 V Ta = 25C
5
Output current IO (A)
4
Input voltage VIN (V)
103
10
3
102
1
2
10
0.1
1
0 0.1
1
10
100
1 0.4
0.6
0.8
1.0
1.2
1.4
0.01 0.1
1
10
100
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
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5
UNR121x Series
Characteristics charts of UNR1214 IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
160 Ta = 25C IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 80 0.4 mA 0.3 mA 40
100
VCE(sat) IC
IC / IB = 10
hFE IC
400 VCE = 10 V
120
Forward current transfer ratio hFE
Collector current IC (mA)
10
300 Ta = 75C 200 25C -25C 100
1
Ta = 75C 0.1 -25C 0.01 0.1 1 10 100 25C
0.2 mA 0.1 mA
0
0
2
4
6
8
10
12
0
1
10
100
1 000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
IO VIN
104 VO = 5 V Ta = 25C
100
VIN IO
VO = 0.2 V Ta = 25C
5
Output current IO (A)
4
3
102
Input voltage VIN (V)
103
10
1
2
10
0.1
1
0 0.1
1
10
100
1 0.4
0.6
0.8
1.0
1.2
1.4
0.01 0.1
1
10
100
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR1215 IC VCE
IB = 1.0 mA 0.9 mA 0.8 mA Ta = 25C
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
100 IC / IB = 10
hFE IC
400 VCE = 10 V
160
120
0.7 mA 0.6 mA 0.5 mA 0.4 mA 0.3 mA 0.2 mA 0.1 mA
10
Forward current transfer ratio hFE
Collector current IC (mA)
300 Ta = 75C
80
1
200 25C -25C 100
Ta = 75C 0.1 -25C 0.01 0.1 1 10 100 25C
40
0
0
2
4
6
8
10
12
0
1
10
100
1 000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
6
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UNR121x Series
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
IO VIN
104 VO = 5 V Ta = 25C
100
VIN IO
VO = 0.2 V Ta = 25C
5
Output current IO (A)
4
3
102
Input voltage VIN (V)
103
10
1
2
10
0.1
1
0 0.1
1
10
100
1 0.4
0.6
0.8
1.0
1.2
1.4
0.01 0.1
1
10
100
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR1216 IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
160 Ta = 25C IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA 0.3 mA 0.2 mA
100
VCE(sat) IC
IC / IB = 10
hFE IC
400 VCE = 10 V
Forward current transfer ratio hFE
Ta = 75C 300 25C -25C 200
Collector current IC (mA)
120
10
80
1
Ta = 75C 0.1 25C
40
100
0.1 mA
0 0 2 4 6 8 10 12
-25C 0.01 0.1
0
1 10 100
1
10
100
1 000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
IO VIN
104 VO = 5 V Ta = 25C
100
VIN IO
VO = 0.2 V Ta = 25C
5
Output current IO (A)
4
3
102
Input voltage VIN (V)
103
10
1
2
10
0.1
1
0 0.1
1
10
100
1 0.4
0.6
0.8
1.0
1.2
1.4
0.01 0.1
1
10
100
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
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7
UNR121x Series
Characteristics charts of UNR1217 IC VCE
a IB =1 .0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA
VCE(sat) IC
T = 25C
hFE IC
400 VCE = 10 V
Forward current transfer ratio hFE
100
Collector-emitter saturation voltage VCE(sat) (V)
120
100
IC / IB = 10
Collector current IC (mA)
10
300
80 0.4 mA 0.3 mA 0.2 mA
60
1
Ta = 75C
200
Ta = 75C 25C
40
25C 0.1
100
-25C
20 0 0 2 4 6 8
0.1 mA
-25C 0.01 0.1 1 10 100
0
10
12
1
10
100
1 000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
IO VIN
104 VO = 5 V Ta = 25C
100
VIN IO
VO = 0.2 V Ta = 25C
5
Output current IO (A)
4
Input voltage VIN (V)
103
10
3
102
1
2
10
0.1
1
0 0.1
1
10
100
1 0.4
0.6
0.8
1.0
1.2
1.4
0.01 0.1
1
10
100
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR1218 IC VCE
Ta = 25C
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
100 IC / IB = 10
160
hFE IC
VCE = 10 V
240
Collector current IC (mA)
160
IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA
Forward current transfer ratio hFE
200
10
120
Ta = 75C 80 25C -25C 40
120 0.6 mA 0.5 mA 0.4 mA 0.3 mA 0.2 mA 0 0.1 mA 0 2 4 6 8 10 12
1 Ta = 75C
80
0.1
25C
40
-25C 0.01 0.1
0
1
10
100
1
10
100
1 000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
8
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UNR121x Series
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
IO VIN
104 VO = 5 V Ta = 25C
100
VIN IO
VO = 0.2 V Ta = 25C
5
Output current IO (A)
4
3
102
Input voltage VIN (V)
103
10
1
2
10
0.1
1
0 0.1
1
10
100
1 0.4
0.6
0.8
1.0
1.2
1.4
0.01 0.1
1
10
100
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR1219 IC VCE
Ta = 25C
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
100 IC / IB = 10
hFE IC
160 VCE = 10 V
240
Collector current IC (mA)
160
IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA
Forward current transfer ratio hFE
200
10
120
120 0.5 mA 0.4 mA 0.3 mA 0.2 mA 0.1 mA 0 0 2 4 6 8 10 12
1 Ta = 75C 25C 0.1
80
Ta = 75C 25C -25C
80
40
40
-25C 0.01 0.1
0
1 10 100
1
10
100
1 000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6
IO VIN
f = 1 MHz IE = 0 Ta = 25C
VIN IO
VO = 5 V Ta = 25C
100 VO = 0.2 V Ta = 25C
104
5
Output current IO (A)
4
Input voltage VIN (V)
103
10
3
102
1
2
10
0.1
1
0
0.1
1
10
100
1 0.4
0.6
0.8
1.0
1.2
1.4
0.01 0.1
1
10
100
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
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UNR121x Series
Characteristics charts of UNR121D IC VCE
Ta = 25C 0.9 mA 0.8 mA 0.5 mA 0.7 mA 0.4 mA 25 0.6 mA 0.3 mA IB = 1.0 mA 20
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
100 IC / IB = 10
hFE IC
160 VCE = 10 V Ta = 75C 25C -25C 120
30
10
15 0.2 mA 10 0.1 mA
1
Forward current transfer ratio hFE
100
Collector current IC (mA)
80
25C 0.1 -25C 0.01 0.1
Ta = 75C
40
5
0
0
2
4
6
8
10
12
1
10
0
1
10
100
1 000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
IO VIN
104 VO = 5 V Ta = 25C
100
VIN IO
VO = 0.2 V Ta = 25C
5
Output current IO (A)
4
3
102
Input voltage VIN (V)
2.0 2.5 3.0 3.5 4.0
103
10
1
2
10
0.1
1
0 0.1
1
10
100
1 1.5
0.01 0.1
1
10
100
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR121E IC VCE
IB = 1.0 mA 0.7 mA Ta = 25C 0.9 mA 0.6 mA 0.8 mA
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
100 IC / IB = 10
160
hFE IC
VCE = 10 V
60
Forward current transfer ratio hFE
50
Collector current IC (mA)
10
120
Ta = 75C 25C -25C
40 0.3 mA 0.2 mA 0.4 mA 0.5 mA 0.1 mA
30
1
Ta = 75C
80
20
25C 0.1
40
10
-25C 0.01 0.1 1 10 100
0 1 10 100 1 000
0
0
2
4
6
8
10
12
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
10
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UNR121x Series
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1MHz IE = 0 Ta = 25C
IO VIN
104 VO = 5 V Ta = 25C
100
VIN IO
VO = 0.2 V Ta = 25C
5
Output current IO (A)
103
4
3
102
Input voltage VIN (V)
2.0 2.5 3.0 3.5 4.0
10
1
2
10
0.1
1
0 0.1
1
10
100
1 1.5
0.01 0.1
1
10
100
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
Characteristics charts of UNR121F IC VCE
Ta = 25C
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
100 IC / IB = 10
hFE IC
160 VCE = 10 V
240
160
0.9 mA 0.8 mA 0.7 mA 0.6 mA IB = 1.0 mA 0.5 mA 0.4 mA 0.3 mA
10
Forward current transfer ratio hFE
200
Collector current IC (mA)
120
120
1
Ta = 75C
Ta = 75C 80 25C -25C
80
25C 0.1
40
40 0.2 mA 0.1 mA 0 0 2 4 6 8 10 12
-25C 0.01 0.1 1 10 100
0
1
10
100
1 000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
IO VIN
104 VO = 5 V Ta = 25C
100
VIN IO
VO = 0.2 V Ta = 25C
5
Output current IO (A)
4
3
102
Input voltage VIN (V)
103
10
1
2
10
0.1
1
0 0.1
1
10
100
1 0.4
0.6
0.8
1.0
1.2
1.4
0.01 0.1
1
10
100
Collector-base voltage VCB (V)
Input voltage VIN (V)
Output current IO (mA)
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UNR121x Series
Characteristics charts of UNR121K IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
240 Ta = 25C
100
VCE(sat) IC
IC / IB = 10
hFE IC
240 VCE = 10 V
200
Collector current IC (mA)
10
Forward current transfer ratio hFE
200
160 IB = 1.2 mA 1.0 mA 0.8 mA 80 0.6 mA 0.4 mA 0.2 mA 0 0 2 4 6 8 10 12
160 Ta = 75C 120 25C 80 -25C 40
120
1
25C 0.1
Ta = 75C -25C
40
0.01
1
10
100
1 000
0
1
10
100
1 000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
100
VIN IO
VO = 0.2 V Ta = 25C
5
4
3
Input voltage VIN (V)
10
1
2
0.1
1
0
1
10
100
0.01 0.1
1
10
100
Collector-base voltage VCB (V)
Output current IO (mA)
Characteristics charts of UNR121L IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
240 Ta = 25C
100
VCE(sat) IC
IC / IB = 10
hFE IC
240 VCE = 10 V
200
10
Forward current transfer ratio hFE
200 Ta = 75C
Collector current IC (mA)
160 IB = 1.0 mA 0.8 mA 0.6 mA 80 0.4 mA
160
120
1 Ta = 75C 0.1 25C -25C 0.01
120
25C -25C
80
40 0.2 mA 0 0 2 4 6 8 10 12
40
0
1 10 100 1 000
1
10
100
1 000
Collector-emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
12
SJH00003BED
UNR121x Series
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
6 f = 1 MHz IE = 0 Ta = 25C
VIN IO
100 VO = 0.2 V Ta = 25C
5
4
Input voltage VIN (V)
10
3
1
2
0.1
1
0
1
10
100
0.01 0.1
1
10
100
Collector-base voltage VCB (V)
Output current IO (mA)
SJH00003BED
13
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP

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